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TPCT4204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
TPCT4204
Lithium Ion Secondary Battery Applications
* * * * * * * Lead(Pb)-Free Small footprint due to small and thin package Low source-source ON resistance: RSS (ON) = (22)m (typ.) High forward transfer admittance: |Yfs| = (25) S (typ.) Low leakage current: ISSS = 10 A (max) (VSS = 30 V) Enhancement-model: Vth = 0.5to1.2 V(VSS = 10 V, IS = 200
Common drain
TENTATIVE
Unit: mm
3.80.1 1 0.45 0.45 4
2.00.1
3 2 B
0.025 M B
A)
0.6
0.05
Maximum Ratings (Ta = 25C)
Characteristics Source-source voltage Gate-source voltage Source current DC Pulse (Note 1) (Note 1) Symbol VSSS VGSS IS ISP PD PD EAS IAR EAR Tch Tstg Rating 30 12 6 24 1.7 0.51 TBD 6 0.17 150 -55to150 Unit V V A W W mJ A mJ C C
0.14
0.04
0.05 S
2
0.4 0.1 0.5+0.04 -0.16
S
3
0.4+0.2 -0.1
4
1 0.85 0.1 2.53 0.1 0.2 0.05
Power dissipation (t = 10s ) (Note 2a,3) Power dissipation (t= 10s ) (Note 2b,3) (Note 4)
1.GATE1 2.GATE2 JEDEC JEITA TOSHIBA
3. SOURCE2 4. SOURCE1 2-2S1A
Single pulse avalanche energy Avalanche current
Repetitive avalanche energy (Note 2a, 5) Channel temperature Storage temperature range
Weight: 0.012 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
FET1
1 4
2
3
FET2
1
2004-11-09
TPCT4204
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a,3) Symbol Rth (ch-a) Max 76 Unit C/W
TENTATIVE
Thermal resistance, channel to ambient (t = 10 s) (Note 2b,3)
Rth (ch-a)
244
C/W
Marking (Note 6)
Lot code (month) Pin #1 Part No. (or abbreviation code) Lot No. (weekly code)
204
Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150 Note 2: (a) Device mounted on a glass-epoxy board
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
.
(b) Device mounted on a glass-epoxy board
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: The power dissipation and thermal resistance values are shown for both FETs. Note 4: VDD = 24 V,Tch = 25C (initial),L = mH,RG = 25 ,IAR = 6 A Note 5: Repetitive rating: pulse width limited by max channel temperature. Note 6: on lower left of the marking indicates Pin 1.
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TPCT4204
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Source cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS ISSS V (BR) SSS V (BR) SSX Vth Test Condition VGS = 10 V, VSS = 0 V VSS = 30 V, VGS = 0 V IS = 10 mA, VGS = 0 V IS = 10 mA, VGS = -12 V VSS = 10 V, IS = 200 A VGS = 2.5 V, IS = 3 A Drain-source ON resistance RSS (ON) VGS = 4.0 V, IS = 3 A VGS = 4.5 V, IS = 3 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge1 Diode (source-source) forward voltage tf toff Qg Qgs1 VSSF ISR = 6 A, VGS = 0 V |Yfs| Ciss Crss Coss tr VGS ton 5V 0V 4.7 IS = 3 A VSS = 10 V, IS = 3 A (Note 8) (Note 8) (Note 8) (Note 8) (Note 8) (Note 7) (Note 7) (Note 7) (Note 8)
TENTATIVE
Min 30 15 0.5 (24) (18.5) (17.5) (12.5) Typ. (33) (23) (22) (25) (1990) (150) (210) TBD TBD TBD TBD TBD TBD Max 10 10 1.2 (44) (29.5) (28) ns -1.2 nC V pF S m Unit A A V V
VSS = 10 V, VGS = 0 V, f = 1 MHz (Note 8)
VOUT RL =3.3
VSS 15 V - Duty < 1%, tw = 10 s = (Note 8)
VSS 24 V, VGS = 5 V, IS = 6 A - (Note 8) (Note 9)
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TPCT4204
TENTATIVE
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
4
2004-11-09

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